| 000 | 01011cam a2200277 i 4500 | ||
|---|---|---|---|
| 001 | u44566 | ||
| 003 | SIRSI | ||
| 005 | 20240619145644.0 | ||
| 008 | 110131 eng | ||
| 020 | _a0852969988 | ||
| 050 |
_aTP261 _b.P76 2002 |
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| 245 | 0 | 0 |
_aProcess technology for silicon carbide devices / _cedited by Carl-Mikael Zetterling. |
| 264 | 1 |
_aLondon : _bInstitution of Electrical Engineers, _c2002. |
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| 300 |
_axxi, 216 pages : _billustrations ; _c25cm. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_aunmediated _bn _2rdamedia |
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| 338 |
_avolume _bnc _2rdacarrier |
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| 490 | 1 |
_aEMIS processing series ; _vno. 2 |
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| 596 | _a1 3 | ||
| 650 | 0 |
_aSilicon carbide _xElectric properties. _91327 |
|
| 700 | 1 |
_aZetterling, Carl-Mikael. _9147524 |
|
| 710 | 2 |
_aInstitution of Electrical Engineers. _9122616 |
|
| 907 |
_a.b10316036 _b07-11-22 _c12-09-18 |
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| 998 |
_am _b06-11-22 _cm _da _e- _feng _g _h0 |
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| 999 |
_c22973 _d22973 |
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