000 | 01114cam a2200313 i 4500 | ||
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001 | u81894 | ||
003 | SIRSI | ||
005 | 20240619145903.0 | ||
008 | 110131 eng | ||
020 | _a0852969538 | ||
050 |
_aTK7871.15.G33 _b.P76 1999 |
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245 | 0 | 0 |
_aProperties, processing and applications of gallium nitride and related semiconductors / _cedited by James H. Edgar...[and others]. |
250 | _a3rd ed. | ||
264 | 1 |
_aLondon : _bIEE, _c1999. |
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300 |
_axxiii, 656 pages : _billustrations ; _c29 cm. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_aunmediated _bn _2rdamedia |
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338 |
_avolume _bnc _2rdacarrier |
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490 | 1 |
_aEMIS datareviews series ; _vno.23 |
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596 | _a1 3 | ||
650 | 0 |
_aGallium nitride. _983231 |
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650 | 0 |
_aLight emitting diodes. _93317 |
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650 | 0 |
_aWide gap semiconductors. _9154337 |
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650 | 0 |
_aSemiconductors _xMaterials. _93882 |
|
700 | 1 |
_aEdgar, James H. _9192654 |
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907 |
_a.b10379563 _b07-11-22 _c12-09-18 |
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998 |
_am _b06-11-22 _cm _da _e- _feng _g _h0 |
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999 |
_c29324 _d29324 |