| 000 | 01246cam a2200361 i 4500 | ||
|---|---|---|---|
| 001 | u32691 | ||
| 003 | UTHM | ||
| 005 | 20240619150707.0 | ||
| 008 | 110131 eng | ||
| 020 | _a0852967780 | ||
| 050 |
_aQC611.8.S5 _b.S87 2001 |
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| 245 | 0 | 0 |
_aStrained silicon heterostructures : _bmaterials and devices / _cedited by C. K. Maiti, N. B. Chakrabarti and S. K. Ray. |
| 264 | 1 |
_aLondon : _bInstitution of Electrical Engineers, _c[2000]. |
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| 264 | 4 | _c©2000. | |
| 300 |
_axii, 496 pages : _billustrations ; _c24 cm. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_aunmediated _bn _2rdamedia |
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| 338 |
_avolume _bnc _2rdacarrier |
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| 490 | 1 |
_aIEE circuits, devices and systems series ; _v12 |
|
| 596 | _a1 4 | ||
| 650 | 0 |
_aSilicon. _920230 |
|
| 650 | 0 |
_aHeterostructures. _949318 |
|
| 650 | 0 |
_aSilicium. _9131784 |
|
| 700 | 1 |
_aMaiti, C.K. _9106709 |
|
| 700 | 1 |
_aRay, S. K. _9131785 |
|
| 700 | 1 |
_aChakrabarti, N. B. _9131786 |
|
| 710 | 2 |
_aInstitution of Electrical Engineers. _9122616 |
|
| 907 |
_a.b10598091 _b27-09-21 _c06-04-21 |
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| 998 |
_am _b06-04-21 _cm _da _e- _feng _g _h0 |
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| 999 |
_c51137 _d51137 |
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