000 | 00847cam a2200241 i 4500 | ||
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001 | u9550 | ||
003 | SIRSI | ||
005 | 20240619145200.0 | ||
008 | 990725 00 eng | ||
020 | _a0132279355 | ||
050 |
_aTK7871.95 _b.F67 1997 |
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100 | 1 |
_aFoty, D.. , _eauthor _9209483 |
|
245 | 1 | 0 |
_aMOSFET modeling with SPICE : _bprinciples and practice / _cDaniel P. Foty. |
264 | 1 |
_aNew Jersey : _bPrentice-Hall, _c1997. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_aunmediated _bn _2rdamedia |
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338 |
_avolume _bnc _2rdacarrier |
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596 | _a1 3 | ||
650 | 0 |
_aMetal oxide semiconductor field-effect transistors _xComputer simulation. _93293 |
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907 |
_a.b10169805 _b07-11-22 _c15-03-18 |
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998 |
_am _b06-11-22 _cm _da _e- _feng _g _h0 |
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999 |
_c9840 _d9840 |